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| (R) STD616A-1 HIGH VOLTAGE NPN POWER TRANSISTOR s s s s s REVERSE PINS OUT Vs STANDARD IPAK (TO-251) PACKAGE HIGH VOLTAGE CAPABILITY HIGH DC CURRENT GAIN THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION 1 3 2 APPLICATIONS: s SWITCH MODE POWER SUPPLIES DESCRIPTION The STD616A-1 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. IPAK TO-251 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max. Operating Junction Temperature o Value 1000 450 12 1.6 2.4 0.8 1.2 20 -65 to 150 150 Unit V V V A A A A W o o C C April 1999 1/5 STD616A-1 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 6.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES V CEO(sus) V BEO V CE(sat ) V BE(s at) h F E Parameter Collector Cut-off Current (V BE = 0 V) Collector-Emitter Sustaining Voltage Collector-Base Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain Test Cond ition s V CE = 1000 V V CE = 1000 V I C = 100 mA I C = 1 mA I C = 250 mA I C = 0.8 A I C = 250 mA I C = 0.8 A IC IC IC IC = = = = 200 A 300 mA 480 mA 1.6 A I B = 65 mA I B = 250 mA I B = 65 mA I B = 250 mA V CE = 5 V V CE = 5 V V CE = 5 V V CE = 5 V I C = 250 mA IB2 = -130 mA 17 25 12 4 0.2 5 0.65 1 2.5 0.35 5 0.5 2.5 0.25 s s s s s s s s s s T j = 125 C L = 25 mH 450 12 0.3 0.5 1.0 1.2 o Min. Typ . Max. 50 0.5 Un it A mA V V V V V V t on ts tf t on ts tf ts tf ts tf RESISTIVE LO AD Turn O n Time Storage Time Fall Time RESISTIVE LO AD Turn O n Time Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Turn O n Time Storage Time Fall Time V CC = 250 V I B1 = 65 mA V CC = 250 V I B1 = 160 mA I C = 0.8 A I B2 = -0.4 A V c l = 300 V I B1 = 65 mA L = 200 H V c l = 300 V I B1 = 160 mA L = 200 H IC = 250 mA IB2 = -130 mA IC = 0.8 A I B2 = -0.4 A Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/5 STD616A-1 Safe Operating Area Derating Curve Reverse Biased SOA 3/5 STD616A-1 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 0.45 0.48 6.00 6.40 4.40 15.90 9.00 0.80 0.80 10o 0.30 0.95 0.60 0.60 6.20 6.60 4.60 16.30 9.40 1.20 1.00 0.018 0.019 0.237 0.252 0.173 0.626 0.354 0.031 0.031 10o 2.20 0.90 0.70 0.64 5.20 mm TYP. MAX. 2.40 1.10 1.30 0.90 5.40 0.85 0.012 0.037 0.024 0.024 0.244 0.260 0.181 0.642 0.370 0.047 0.039 MIN. 0.087 0.035 0.028 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.035 0.213 0.033 P032N_E 4/5 STD616A-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5 |
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